@inproceedings{33854,
  keywords = {Microstructure, Thin films, Titanium compounds, Ferroelectric materials, Textures, Coercive force, Domain structure, Correlation methods, Ceramic capacitors},
  author = {H Li and B Yang and A Dhote and S Aggarwal and L Salamanca-Riba and Ramamoorthy Ramesh},
  title = {Microstructure investigations and structure-property correlations in ferroelectric thin-film capacitors},
  abstract = {Epitaxial 0%, 3% and 10% La doped PZT capacitors with a LSCO bottom electrode grown by pulsed laser deposition on Si using a Ti(Al)N/Pt conducting barrier layer were systematically studied. Ferroelectric capacitors substituted with 10% La show a significantly lower coercive voltage compared to capacitors with 0% and 3% La. This is attributed to the systematic variation of the domain structure of the PLZT film with the increase of La concentration. The in-plane orientation relationship of this heterostructure is: [110]PLZT//[110]LSCO//[110]Pt// [110]Ti(Al)N//[110]Si. The morphology of the domains as a function of La concentration was studied using high resolution transmission electron microscopy(HREM). The Pt/Ti(Al)N conducting barrier layer stack is intact after the deposition of the LSCO/PLZT/LSCO stack. All Ti(Al)N layers in the samples studied consist of column-like structures with a [110] texture.},
  year = {1998},
  journal = {Materials Research Society Symposium - Proceedings},
  volume = {493},
  pages = {171-176},
  publisher = {MRS, Warrendale, PA, United States},
  issn = {02729172},
  note = {cited By 1},
  language = {eng},
}