@article{Shinde1999594,
  author = {S.R Shinde and S.E Lofland and C.S Ganpule and S.M Bhagat and S.B Ogale and Ramamoorthy Ramesh and T Venkatesan},
  title = {Improvement in spin-wave resonance characteristics of epitaxial barium-ferrite thin films by using an aluminum-doped strontium-ferrite buffer layer},
  abstract = {We report on the effects of using SrFe7Al5O19 as a buffer layer for growth of high-quality epitaxial barium-ferrite thin films on sapphire substrates. X-ray diffraction studies reveal that the buffer layer causes the interfacial strains in the barium-ferrite films to relax. As a result, the ferromagnetic resonance linewidth decreases even in the as-deposited case. However, the more striking result is the drastic reduction in the linewidth that occurs when the barium-ferrite film is deposited on the buffer layer and subsequently annealed at 1000{\textdegree}C for 2 h, allowing the observation of a large number of spin-wave resonances (up to the 15th mode), indicating an improvement in both the surface and interface characteristics. {\textcopyright} 1999 American Institute of Physics.},
  year = {1999},
  booktitle = {Applied Physics Letters},
  journal = {Applied Physics Letters},
  series = {Applied Physics Letters},
  volume = {74},
  number = {4},
  pages = {594-596},
  institution = {American Institute of Physics Inc.},
  publisher = {American Institute of Physics Inc.},
  issn = {00036951},
  doi = {10.1063/1.123156},
  note = {cited By 23},
  language = {eng},
}