@article{Ganpule19993874,
  author = {C.S Ganpule and A Stanishevsky and S Aggarwal and J Melngailis and E Williams and Ramamoorthy Ramesh and V Joshi and C. Paz De Araujo},
  title = {Scaling of ferroelectric and piezoelectric properties in Pt/SrBi2Ta2O9/Pt thin films},
  abstract = {Scaling of the ferroelectric and piezoelectric properties in Pt/SrBi2Ta2O9/Pt thin films was studied. Focused ion beam milling was used to fabricate submicron devices (1 {\texttimes} 1, 0.5 {\texttimes} 0.5, 0.25 {\texttimes} 0.25, 0.09 {\texttimes} 0.09, and 0.07 {\texttimes} 0.07 μm2) and scanning force microscopy was used to examine their piezoelectric response. It was found that capacitors as small as 0.09 {\texttimes} 0.09 μm2 exhibit good piezoelectric/ferroelectric properties and that submicron (0.25 {\texttimes} 0.25 μm2) capacitors show resistance to bipolar fatigue with up to at least 109 cycles. The results were compared with similar capacitor structures milled in the Pb1.0(Nb0.04Zr0.28Ti0.68)O 3 system where structures as small as 0.07 {\texttimes} 0.07 μm2 were analyzed. {\textcopyright} 1999 American Institute of Physics.},
  year = {1999},
  booktitle = {Applied Physics Letters},
  journal = {Applied Physics Letters},
  series = {Applied Physics Letters},
  volume = {75},
  number = {24},
  pages = {3874-3876},
  institution = {American Institute of Physics Inc.},
  publisher = {American Institute of Physics Inc.},
  issn = {00036951},
  doi = {10.1063/1.125485},
  note = {cited By 88},
  language = {eng},
}