@article{33776,
  author = {D.E Steinhauer and C.P Vlahacos and F.C Wellstood and S.M Anlage and C Canedy and Ramamoorthy Ramesh and A Stanishevsky and J Melngailis},
  title = {Quantitative imaging of dielectric permittivity and tunability with a near-field scanning microwave microscope},
  abstract = {We describe the use of a near-field scanning microwave microscope to image the permittivity and tunability of bulk and thin film dielectric samples on a length scale of about 1 μm. The microscope is sensitive to the linear permittivity, as well as to nonlinear dielectric terms, which can be measured as a function of an applied electric field. We introduce a versatile finite element model for the system, which allows quantitative results to be obtained. We demonstrate use of the microscope at 7.2 GHz with a 370 nm thick Ba0.6Sr0.4TiO3 thin film on a LaAlO3 substrate. This technique is nondestructive and has broadband (0.1-50 GHz) capability. The sensitivity of the microscope to changes in permittivity is Δ∈r=2 at ∈r=500, while the nonlinear dielectric tunability sensitivity is Δ∈113=10-3 (kV/cm)-1. © 2000 American Institute of Physics.},
  year = {2000},
  journal = {Review of Scientific Instruments},
  volume = {71},
  number = {7},
  pages = {2751-2758},
  publisher = {American Institute of Physics Inc.},
  issn = {00346748},
  doi = {10.1063/1.1150687},
  note = {cited By 70},
  language = {eng},
}