@article{33762,
  author = {T Friessnegg and S Aggarwal and Ramamoorthy Ramesh and B Nielsen and E.H Poindexter and D.J Keeble},
  title = {Vacancy formation in (Pb,La)(Zr,Ti)O3 capacitors with oxygen deficiency and the effect on voltage offset},
  abstract = {Vacancy-related defect profiles have been measured for La0.5Sr0.5CoO3/(Pb0.9La 0.1) × (Zr0.2Ti0.8)O3/La0.5Sr 0.5CoO3 ferroelectric capacitors using a variable-energy positron beam. By varying the layer thickness and the postgrowth processing in a reducing ambient, a capacitor showing oxygen deficiency dominantly in the top electrode and one with deficiency in both electrodes were produced. The capacitor with an asymmetric defect profile showed a voltage offset polarization-voltage hysteresis loop, that with a symmetric distribution of vacancy-related defects showed no offset. These results are discussed in the context of current models for imprint. © 2000 American Institute of Physics.},
  year = {2000},
  journal = {Applied Physics Letters},
  volume = {77},
  number = {1},
  pages = {127-129},
  publisher = {American Institute of Physics Inc.},
  issn = {00036951},
  doi = {10.1063/1.126898},
  note = {cited By 119},
  language = {eng},
}