@article{33758,
  author = {C.L Canedy and H Li and S.P Alpay and L Salamanca-Riba and A.L Roytburd and Ramamoorthy Ramesh},
  title = {Dielectric properties in heteroepitaxial Ba0.6Sr0.4TiO3 thin films: Effect of internal stresses and dislocation-type defects},
  abstract = {A series of heteroepitaxial Ba0.6Sr0.4TiO3 were grown on 0.29(LaAlO3):0.35(Sr2TaAlO6) substrates using pulsed-laser deposition. X-ray characterization revealed compressive in-plane stresses in the thinnest films, which were relaxed in a continuous fashion with increasing thickness. A theoretical treatment of the misfit strain was in good agreement with the measured out-of-plane lattice parameter. The low-frequency dielectric constant was measured to be significantly less than the bulk value and found to decrease rapidly for films less than 100 nm. A thermodynamic model was developed to understand the reduction in dielectric constant. By observing the microstructure using plan-view and cross-section transmission electron microscopy, we identified local strain associated with a threading dislocation density on the order of 1011 cm-2 as a possible mechanism for dielectric degradation in these films. © 2000 American Institute of Physics.},
  year = {2000},
  journal = {Applied Physics Letters},
  volume = {77},
  number = {11},
  pages = {1695-1697},
  publisher = {American Institute of Physics Inc.},
  issn = {00036951},
  doi = {10.1063/1.1308531},
  note = {cited By 222},
  language = {eng},
}