@inproceedings{33753,
  keywords = {Pulsed laser deposition, Substrates, Lanthanum compounds, Epitaxial growth, Heterojunctions, Doping (additives), Colossal magnetoresistance, Field effect semiconductor devices, Dielectric heterostructures},
  author = {T Wu and S.B Ogale and J.E Garrison and B Nagaraj and Z Chen and Ramamoorthy Ramesh and T Venkatesan},
  editor = {Rzchowski M.S and Kawasaki M and Millis A.J and Molnar S and Rajeswari M},
  title = {Deposition and electrical characterization of dielectric/ferromagnetic heterostructure},
  abstract = {<p>We grow Pb(Zr,Ti)O3 (001)/La1-xCaxMnO3 (001) hetereostructure epitaxially on Nb doped STO substrate using pulsed laser ablation. A field effect device configuration is formed with the manganite as the channel and the Nb:STO substrate as the gate. Channel resistance modulation by the gate pulsing is studied both with and without magnetic field. We not only find a remarkably large electroresistance effect of 76% at 4×105V/cm, but also the complementarity of this ER effect with the widely studied CMR effect. The large size of this effect and the complimentarity of ER and MR effects strongly suggest a percolative phase separated picture of manganites.</p>},
  year = {2000},
  journal = {Materials Research Society Symposium - Proceedings},
  volume = {602},
  pages = {363-370},
  issn = {02729172},
  note = {<p>cited By 0</p>},
  language = {eng},
}