@inproceedings{33727,
  keywords = {oxidation, thin films, glass, X ray diffraction, X ray photoelectron spectroscopy, Molybdenum, Desorption peak, Field emitter arrays, Partial oxidation, Thermal desorption spectroscopy, Ultraviolet photoelectron spectroscopy},
  author = {B.R Chalamala and R.H Reuss and Y Wei and J.M Bernhard and E.D Sosa and D.E Golden and S Aggarwal and Ramamoorthy Ramesh},
  title = {Oxidation of molybdenum thin films and its impact on molybdenum field emitter arrays},
  abstract = {Oxidation of emitter surfaces can be a serious problem for Mo field emitter arrays. We studied the oxidation and related changes in the electronic properties of Mo thin films as a function of annealing temperature. Experiments were done on Mo thin films prepared on Si and sodalime glass substrates. These films were thermally oxidized and characterized using a variety of techniques including x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS), and thermal desorption spectroscopy (TPD) methods. For films oxidized below 400°C, partial oxidation was observed, with MoO3(110) being the principal oxide phase. However, at a temperature of 500°C and above, oxidation of the film was complete. Electrical characteristics of the films undergo a rapid transition from semiconductive to highly insulating at temperatures between 475 to 500°C. Temperature programmed desorption spectra showed that the oxides are stable at elevated temperature with only a principal O2 desorption peak at approximately 786°C. © 2001 Materials Research Society.},
  year = {2001},
  journal = {Materials Research Society Symposium Proceedings},
  volume = {685},
  pages = {353-358},
  issn = {02729172},
  isbn = {1558996214; 9781558996212},
  note = {cited By 0},
  language = {eng},
}