@article{33723,
  keywords = {Thin films, Transmission electron microscopy, Silicon, Substrates, Epitaxial growth, Computer simulation, Strontium compounds, Interfaces (materials), Crystal lattices, Dislocations (crystals), Heteroepitaxy, Crystal microstructure, High resolution electron microscopy, Image analysis},
  author = {G.Y Yang and J.M Finder and J Wang and Z.L Wang and Z Yu and J Ramdani and R Droopad and K.W Eisenbeiser and Ramamoorthy Ramesh},
  title = {Study of microstructure in SrTiO3/Si by high-resolution transmission electron microscopy},
  abstract = {Microstructure in the SrTiO3/Si system has been studied using high-resolution transmission electron microscopy and image simulations. SrTiO3 grows heteroepitaxially on Si with the orientation relationship given by (001)STO//(001)Si and [100]STO//[110]Si. The lattice misfit between the SrTiO3 thin films and the Si substrate is accommodated by the presence of interfacial dislocations at the Si substrate side. The interface most likely consists of Si bonded to O in SrTiO3. The alternative presentation of Sr and Si atoms along the interface leads to the formation of 2× and 3× Sr configurations. Structural defects in the SrTiO3 thin film mainly consist of tilted domains and dislocations.},
  year = {2002},
  journal = {Journal of Materials Research},
  volume = {17},
  number = {1},
  pages = {204-213},
  issn = {08842914},
  doi = {10.1557/JMR.2002.0030},
  note = {cited By 30},
  language = {eng},
}