@article{33695,
  keywords = {Thin films, Film, Magnetic field, Lattice constants, Room temperature, Thickness, Crystal structure, Polarization, Ferroelectric materials, Magnetism, Article, Priority journal, Ferromagnetic materials, X-ray Diffraction, Calculation, Structure analysis, Heterojunctions, Bismuth derivative, Electric conductivity, Semiconducting bismuth compounds, Iron derivative, Device infection},
  author = {J Wang and J.B Neaton and H Zheng and V Nagarajan and S.B Ogale and B Liu and D Viehland and V Vaithyanathan and D.G Schlom and U.V Waghmare and N.A Spaldin and K.M Rabe and M Wuttig and Ramamoorthy Ramesh},
  title = {Epitaxial BiFeO3 multiferroic thin film heterostructures},
  abstract = {Enhancement of polarization and related properties in heteroepitaxially constrained thin films of the ferroelectromagnet, BiFeO3, is reported. Structure analysis indicates that the crystal structure of film is monoclinic in contrast to bulk, which is rhombohedral. The films display a room-temperature spontaneous polarization (50 to 60 microcoulombs per square centimeter) almost an order of magnitude higher than that of the bulk (6.1 microcoulombs per square centimeter). The observed enhancement is corroborated by first-principles calculations and found to originate from a high sensitivity of the polarization to small changes in lattice parameters. The films also exhibit enhanced thickness-dependent magnetism compared with the bulk. These enhanced and combined functional responses in thin film form present an opportunity to create and implement thin film devices that actively couple the magnetic and ferroelectric order parameters.},
  year = {2003},
  journal = {Science},
  volume = {299},
  number = {5613},
  pages = {1719-1722},
  issn = {00368075},
  doi = {10.1126/science.1080615},
  note = {cited By 4623},
  language = {eng},
}