@inproceedings{33694,
  keywords = {thin films, crystal structure, Ferroelectric materials, Dielectric materials, Permittivity, Magnetic domains, 180° c-c domain wall, 90° a-c domain wall, Linear dielectric constant, Nonlinear dielectric constant, PZT thin films, Scanning nonlinear dielectric microscopy},
  author = {Y Cho and K Matsuura and N Valanoor and Ramamoorthy Ramesh},
  title = {Direct domain wall thickness measurement using scanning nonlinear dielectric microscopy},
  abstract = {Using Scanning Nonlinear Dielectric Microscopy (SNDM) which has attained sub-nanometer resolution, we measured the linear dielectric constant of a-domains and c-domains in the (1,0,0) and (0,0,1) oriented PbZr 0.2 Ti 0.8 O 3 thin film and confirmed that the dielectric constant of a-domain is higher than that of c-domain. Next, we observed 90 domain walls (a-c domain walls) and 180 domain walls (c-c domain walls) and we obtained the minimum value of 180 c-c domain wall thickness was 1.87 nm and 90 a-c domain wall was 2.52 nm.},
  year = {2003},
  journal = {Ferroelectrics},
  volume = {292},
  pages = {171-180},
  issn = {00150193},
  doi = {10.1080/00150190390222961},
  note = {cited By 1},
  language = {eng},
}