@inproceedings{33690,
  keywords = {electric potential, hysteresis, Ferroelectric materials, Carrier concentration, Field effect transistors, Solid solutions, Gate voltage},
  author = {A.G Schrott and J.A Misewich and Ramamoorthy Ramesh and V Nagarajan},
  editor = {Ginley D and Guha S and Carter S and Chambers S.A and Droopad R and Hosono H and Paine D.C and Schlom D.G and Tate J},
  title = {Ferroelectric field effect device},
  abstract = {<p>A ferroelectric field effect transistor with an oxide channel layer and a lead zirconate titanate gate oxide has been fabricated. The channel is a strontium ruthenate/titanate solid solution with n type semiconducting behavior, which has sufficient OFF-state free carrier concentration to provide proper balancing charge for ferroelectric stability. The dependence of channel resistance with gate voltage at room temperature yields a hysteresis curve with two state at zero volts with a ΔR/R of 75% and a coercive voltage of 3 volts. The device was subjected to more than 1010 cycles with no degradation and was also operated at 60° C with a only a slight reduction in the switching ratio.</p>},
  year = {2003},
  journal = {Materials Research Society Symposium - Proceedings},
  volume = {747},
  pages = {287-292},
  issn = {02729172},
  note = {<p>cited By 1</p>},
  language = {eng},
}