@article{33687,
  keywords = {oxidation, thin films, copper, diffusion, annealing, electrodes, Materials science, Permittivity, Capacitors, Synthesis (chemical), Barium compounds, Leakage currents, Dielectric losses, Diffusion barrier},
  author = {W Fan and B Kabius and J.M Miller and S Saha and J.A Carlisle and O Auciello and R.P.H Chang and Ramamoorthy Ramesh},
  title = {Materials science and integration bases for fabrication of (Ba xSr1-x)TiO3 thin film capacitors with layered Cu-based electrodes},
  abstract = {An investigation on the synthesis and material properties of layered TiAl/Cu/Ta electrodes was performed to achieve the integration of Cu electrodes. The TiAl layer provided an excellent barrier against oxygen diffusion into the Cu layer to inhibit Cu oxidation while the Ta layer is an excellent diffusion barrier to inhibit deleterious Cu diffusion into the Si substrate. Using the surface analytical methods, characterization of the Cu-based layered structure showed that two amorphous oxide layers were formed on both sides of the TiAl barrier.},
  year = {2003},
  journal = {Journal of Applied Physics},
  volume = {94},
  number = {9},
  pages = {6192-6200},
  issn = {00218979},
  doi = {10.1063/1.1616984},
  note = {cited By 32},
  language = {eng},
}