@inproceedings{33684,
  keywords = {Thin films, Electrodes, Pyrolysis, Epitaxial growth, Silicon wafers, Capacitors, Electrical characteristics, Fatigue endurance, Low-temperature fabrication, Differential thermal analysis, Low temperature effects, Sol-gels},
  author = {K Maki and B.T Liu and Y So and H Vu and Ramamoorthy Ramesh and J Finder and Z Yu and R Droopad and K Eisenbeiser},
  title = {Low-temperature fabrication of epitaxial and random-oriented Pb(Zr,Ti)O 3 capacitors with SrRuO 3 electrodes on Si wafers},
  abstract = {Epitaxial and random-oriented Pb(Zr,Ti)O 3 (PZT) films were fabricated at 450-550°C on SrRuO 3 (SRO)/SrTiO 3/Si and SRO/amorphous Ti-Al layer-Si substrates, respectively, using a modified sol-gel process. For comparison, polycrystalline PZT films were also prepared on Pt-Si substrates using the same method. Thermogravimetric and differential thermal analysis (TG-DTA) of the modified sol-gel solution indicated that the solution began crystallization below 400°C. Both SRO/epitaxial PZT/SRO and SRO/random-oriented PZT/SRO capacitors processed at the same temperature had similar polarization values, and all the SRO/PZT/SRO capacitors processed at 450-550°C exhibited the favorable electrical characteristics including high polarization, high resistivity, small pulse width dependence, and good fatigue endurance. While the Pt/PZT/Pt capacitors processed at 450°C showed considerably low polarization compared to the SRO/PZT/SRO capacitors processed at the same temperature. High-quality SRO/PZT/SRO capacitors processed at low temperature have a bright prospect of fabrication of potential Si devices integrated PZT capacitors without thermal degradation.},
  year = {2003},
  journal = {Integrated Ferroelectrics},
  volume = {52},
  pages = {19-31},
  issn = {10584587},
  doi = {10.1080/10584580390254088},
  note = {cited By 5},
  language = {eng},
}