@article{33676,
  keywords = {thin films, pulsed laser deposition, Perovskite, electrodes, film growth, Magnetic fields, Electric fields, phase separation, lanthanum compounds, Magnetization, Metal insulator transition, Field effect transistors, Colossal magnetoresistance, electric conductivity, Magnetic hysteresis, Drain electrodes, Semiconducting channels, Semiconducting manganese compounds, Semiconducting silicon},
  author = {T Zhao and S.B Ogale and S.R Shinde and Ramamoorthy Ramesh and R Droopad and J Yu and K Eisenbeiser and J Misewich},
  title = {Colossal magnetoresistive manganite-based ferroelectric field-effect transistor on Si},
  abstract = {An all-perovskite ferroelectric field effect transistors (FeFET) structure with a ferroelectric Pb(Zr 0.2Ti 0.8)O 3 (PZT) gate and a colossal magnetoresistive (CMR) La 0.8Ca 0.2MnO 3 (LCMO) channel was fabricated by pulsed laser deposition (PLD). The tunability of the channel resistance under electric and magnetic fields was studied. The resistivity change under electric and magnetic fields was explained using the electronic phase separation scenario. A maximum modulation of 20% after an electric field poling of 1.5 × 10 5 V/cm and 50% under a magnetic field of 1T was observed near the metal-insulator transition temperature.},
  year = {2004},
  journal = {Applied Physics Letters},
  volume = {84},
  number = {5},
  pages = {750-752},
  issn = {00036951},
  doi = {10.1063/1.1644321},
  note = {cited By 69},
  language = {eng},
}