@article{33652,
  keywords = {Lead, Thin films, Polycrystals, Polarization, Epitaxial growth, Piezoelectricity, Ferroelectric thin films, Microelectromechanical devices, Extrinsic effects, In-plane strains, Piezoelectric coefficients},
  author = {J Ouyang and Ramamoorthy Ramesh and A.L Roytburd},
  title = {Intrinsic effective piezoelectric coefficient e 31,f for ferroelectric thin films},
  abstract = {As a function of film orientation, the intrinsic effective piezoelectric coefficient e31,f is generally formulated for a substrate-constrained ferroelectric film. Numerical results are obtained for Pb (Zrx Ti1-x) O3 (PZT) thin films with tetragonal and rhombohedral compositions. It is illustrated that the optimal orientation for e31,f are close to [001] orientation in both tetragonal and rhombohedral PZT films and the maximum calculated e31,f is about -30 Cm2 on the rhombohedral side of the morphotropic phase boundary. © 2005 American Institute of Physics.},
  year = {2005},
  journal = {Applied Physics Letters},
  volume = {86},
  number = {15},
  pages = {1-3},
  issn = {00036951},
  doi = {10.1063/1.1899252},
  note = {cited By 18},
  language = {eng},
}