@inproceedings{33642,
  keywords = {sensors, silicon, Lead compounds, Ferroelectric films, MEMS, Piezoelectric materials, Epitaxial films, Si substrates, Orientation dependence, Piezoelectric constant, Sensor devices},
  author = {J Ouyang and Ramamoorthy Ramesh and A.L Roytburd},
  title = {Effective direct piezoelectric constants in epitaxial ferroelectric films as MEMS sensors},
  abstract = {Following our previous work on the converse piezoelectric constant-d 33.fC in epitaxial ferroelectric films for MEMS actuator applications', the orientation dependence of the direct piezoelectric constants d33,fD, d31.fD and d 33,fD are generally formulated, which can help to predict and optimize the performance of piezoelectric MEMS sensor devices based on ferroelectric thin films. Numerical results are obtained and discussed for Pb(ZrxTi1-x)O3 thin films grow on Si substrates with various compositions and structures. © 2005 Materials Research Society.},
  year = {2005},
  journal = {Materials Research Society Symposium Proceedings},
  volume = {881},
  pages = {125-130},
  issn = {02729172},
  isbn = {1558998357; 9781558998353},
  note = {cited By 0},
  language = {eng},
}