@article{33630, keywords = {transmission electron microscopy, Polarization, Ferroelectric materials, Epitaxial growth, Heterojunctions, Piezoelectric response, Ultrathin films, Epitaxial ferroelectric heterostructures, Polydomain state, Switchable polarization}, author = {V Nagarajan and J Junquera and J.Q He and C.L Jia and R Waser and K Lee and Y.K Kim and Sunhee Baik and T Zhao and Ramamoorthy Ramesh and Ph Ghosez and K.M Rabe}, title = {Scaling of structure and electrical properties in ultrathin epitaxial ferroelectric heterostructures}, abstract = {

Scaling of the structural order parameter, polarization, and electrical properties was investigated in model ultrathin epitaxial SrRuO 3/PbZr 0.2Ti 0.8O 3/SrRuO 3/SrTiO 3 heterostructures. High-resolution transmission electron microscopy images revealed the interfaces to be sharp and fully coherent. Synchrotron x-ray studies show that a high tetragonality (c/a∼1.058) is maintained down to 50 Å thick films, suggesting indirectly that ferroelectricity is fully preserved at such small thicknesses. However, measurement of the switchable polarization (Δ3) using a pulsed probe setup and the out-of-plane piezoelectric response (d 33) revealed a systematic drop from ∼140 μC/cm 2 and 60 pm/V for a 150 Å thick film to 11 μC/cm 2 and 7 pm/V for a 50 Å thick film. This apparent contradiction between the structural measurements and the measured switchable polarization is explained by an increasing presence of a strong depolarization field, which creates a pinned 180° polydomain state for the thinnest films. Existence of a polydomain state is demonstrated by piezoresponse force microscopy images of the ultrathin films. These results suggest that the limit for a ferroelectric memory device may be much larger than the fundamental limit for ferroelectricity. © 2006 American Institute of Physics.

}, year = {2006}, journal = {Journal of Applied Physics}, volume = {100}, number = {5}, issn = {00218979}, doi = {10.1063/1.2337363}, note = {

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}, language = {eng}, }