@article{33613,
  keywords = {Thin films, Annealing, Electrochemical electrodes, Film growth, Bismuth compounds, Ferroelectricity, Piezoelectric materials, Ferroelectric properties, Synthesis (chemical), Piezoelectric properties, Piezoresponse force microscopy (PFM), Polymeric precursor method},
  author = {A.Z Simões and M.P Cruz and A Ries and E Longo and J.A Varela and Ramamoorthy Ramesh},
  title = {Ferroelectric and piezoelectric properties of bismuth titanate thin films grown on different bottom electrodes by soft chemical solution and microwave annealing},
  abstract = {Bismuth titanate (Bi4Ti3O12, BIT) films were evaluated for use as lead-free piezoelectric thin films in micro-electromechanical systems. The films were grown by the polymeric precursor method on LaNiO3/SiO2/Si (1 0 0) (LNO), RuO2/SiO2/Si (1 0 0) (RuO2) and Pt/Ti/SiO2/Si (1 0 0) (Pt) bottom electrodes in a microwave furnace at 700 °C for 10 min. The domain structure was investigated by piezoresponse force microscopy (PFM). Although the converse piezoelectric coefficient, d33, regardless of bottom electrode is around (∼40 pm/V), those over RuO2 and LNO exhibit better ferroelectric properties, higher remanent polarization (15 and 10 μC/cm2), lower drive voltages (2.6 and 1.3 V) and are fatigue-free. The experimental results demonstrated that the combination of the polymeric precursor method assisted with a microwave furnace is a promising technique to obtain films with good qualities for applications in ferroelectric and piezoelectric devices. © 2006 Elsevier Ltd. All rights reserved.},
  year = {2007},
  journal = {Materials Research Bulletin},
  volume = {42},
  number = {5},
  pages = {975-981},
  issn = {00255408},
  doi = {10.1016/j.materresbull.2006.08.006},
  note = {cited By 17},
  language = {eng},
}