@article{33607,
  keywords = {Adsorption, Thin films, Molecular beam epitaxy, Stoichiometry, Bismuth oxides, Epitaxial growth, Bismuth compounds, Differential vapor pressures, Adsorption-controlled growth},
  author = {J.F Ihlefeld and A Kumar and V Gopalan and D.G Schlom and Y.B Chen and X.Q Pan and T Heeg and J Schubert and X Ke and P Schiffer and J Orenstein and L.W Martin and Y.H Chu and Ramamoorthy Ramesh},
  title = {Adsorption-controlled molecular-beam epitaxial growth of BiFe O3},
  abstract = {BiFe O3 thin films have been deposited on (111) SrTi O3 single crystal substrates by reactive molecular-beam epitaxy in an adsorption-controlled growth regime. This is achieved by supplying a bismuth overpressure and utilizing the differential vapor pressures between bismuth oxides and BiFe O3 to control stoichiometry. Four-circle x-ray diffraction reveals phase-pure, untwinned, epitaxial, (0001)-oriented films with rocking curve full width at half maximum values as narrow as 25 arc sec (0.007°). Second harmonic generation polar plots combined with diffraction establish the crystallographic point group of these untwinned epitaxial films to be 3m at room temperature. © 2007 American Institute of Physics.},
  year = {2007},
  journal = {Applied Physics Letters},
  volume = {91},
  number = {7},
  issn = {00036951},
  doi = {10.1063/1.2767771},
  note = {cited By 70},
  language = {eng},
}