@article{33588,
  keywords = {Silicon compounds, Lanthanum compounds, Bismuth compounds, Permittivity, Epitaxial films, Hysteresis loops, Substitution reactions, Coercive voltage, Control domain structure, Rhombohedral distortion},
  author = {Y.H Chu and Q Zhan and C.-H Yang and M.P Cruz and L.W Martin and T Zhao and P Yu and Ramamoorthy Ramesh and P.T Joseph and I.N Lin and W Tian and D.G Schlom},
  title = {Low voltage performance of epitaxial BiFeO3 films on Si substrates through lanthanum substitution},
  abstract = {We have probed the role of La substitution on the ferroelectric properties of epitaxial BiFe O3 films on SrTi O3 -templated Si. This provides a mechanism to engineer the rhombohedral distortion in the crystal and, thus, control domain structure and switching. With a 10% La substitution, the (Bi0.9 La0.1) Fe O3 film showed well-saturated ferroelectric hysteresis loops with a remanent polarization of 45 μC cm2, a converse piezoelectric coefficient d33 of 45 pmV, and a dielectric constant of 140. Over this range of La substitution, the coercive field systematically decreases such that a coercive voltage of 1 V can been obtained in a 100 nm thick film. These results show promise for the ultimate implementation of this lead-free multiferroic operating at voltages in the range of 2-3 V. © 2008 American Institute of Physics.},
  year = {2008},
  journal = {Applied Physics Letters},
  volume = {92},
  number = {10},
  issn = {00036951},
  doi = {10.1063/1.2897304},
  note = {cited By 79},
  language = {eng},
}