@article{33584,
  keywords = {crystal orientation, Ferroelectric materials, Computer simulation, bismuth compounds, Epitaxial films, Film orientations, Constraint theory, Coulomb interactions, Ferroelectric domain structures},
  author = {J.X Zhang and Y.L Li and S Choudhury and L.Q Chen and Y.H Chu and F Zavaliche and M.P Cruz and Ramamoorthy Ramesh and Q.X Jia},
  title = {Computer simulation of ferroelectric domain structures in epitaxial BiFe O3 thin films},
  abstract = {Ferroelectric domain structures of (001)c, (101)c, and (111)c oriented epitaxial BiFe O3 thin films were studied by using the phase-field approach. Long-range elastic and electrostatic interactions were taken into account. The effects of various types of substrate constraint on the domain morphologies were systematically analyzed. It is demonstrated that domain structures of BiFe O3 thin films could be controlled by selecting proper film orientations and substrate constraint. The dependence of the 110c -type domain wall orientation on substrate constraint for the (001)c oriented BiFe O3 thin film was also discussed. © 2008 American Institute of Physics.},
  year = {2008},
  journal = {Journal of Applied Physics},
  volume = {103},
  number = {9},
  issn = {00218979},
  doi = {10.1063/1.2927385},
  note = {cited By 56},
  language = {eng},
}