@article{33537,
  keywords = {Ferromagnetism, Polarization, Ferroelectric materials, Magnetism, ferroelectricity, Ferroelectric polarization, Ferromagnetic materials, Ferromagnetic layers, Interface states, Magnets, Superconducting materials, Spin polarization, Magnetoelectronics, Magnetic couplings, Exchange bias couplings, Spintronic device, Theoretical calculations, Tunnel junctions, Ferroelectric tunnel junctions, Low-power consumption, Magnetic electrodes},
  author = {Ramamoorthy Ramesh},
  title = {Ferroelectrics: A new spin on spintronics},
  abstract = {The use of interface effects for low-power-consumption spintronic devices with the help of a ferroelectric tunnel junction to control the spin polarization of adjacent magnetic electrodes is discussed. The ever-increasing demand for faster, smaller and non-volatile electronics is pushing the limits of present semiconductor-based information processing and storage systems. Ferromagnetic layers in contact with an anti-ferromagnet exhibit an interfacial magnetic coupling termed as exchange bias coupling. Theoretical calculations have predicted the possibility of significant changes in the interfacial magnetization and spin polarization in a ferromagnet in response to the ferroelectric polarization state across the interface. Ferromagnetism and spin polarization can be controlled and manipulated through a coupling of a magnetic layer to a ferroelectric or a multiferroic.},
  year = {2010},
  journal = {Nature Materials},
  volume = {9},
  number = {5},
  pages = {380-381},
  publisher = {Nature Publishing Group},
  issn = {14761122},
  doi = {10.1038/nmat2762},
  note = {cited By 43},
  language = {eng},
}