@article{33532,
  keywords = {Lead, Thin films, Zirconium, Domain walls, Ferroelectric switching, Ferroelastic domains, Applied field, Film orientations, High field, Kolmogorov, Standard system, Switching kinetics},
  author = {D Pantel and Y.-H Chu and L.W Martin and Ramamoorthy Ramesh and D Hesse and M Alexe},
  title = {Switching kinetics in epitaxial BiFeO3 thin films},
  abstract = {The switching kinetics in epitaxial (001)-, (110)-, and (111)-oriented BiFeO3 thin films were investigated as a function of applied field and time. It was found that the ferroelectric switching behavior obeys the Kolmogorov-Avrami-Ishibashi theory only in the high field range. The detailed behavior depends on the film orientation. A comparison with standard systems, such as epitaxial Pb (Zr0.2 Ti0.8) O3 films, reveals some similarities as well as some differences. For instance, the presence of 109° and 71° ferroelastic domain walls might be ruled out as the source of the decrease in switched polarization at low applied fields, in contrast to what is the case for a/c domain walls in tetragonal Pb (Zr 0.2 Ti0.8) O3. © 2010 American Institute of Physics.},
  year = {2010},
  journal = {Journal of Applied Physics},
  volume = {107},
  number = {8},
  issn = {00218979},
  doi = {10.1063/1.3392884},
  note = {cited By 30},
  language = {eng},
}