@article{33508,
  author = {J Ravichandran and W Siemons and M.L Scullin and S Mukerjee and M Huijben and J.E Moore and A Majumdar and Ramamoorthy Ramesh},
  title = {Tuning the electronic effective mass in double-doped SrTiO3},
  abstract = {We elucidate the relationship between effective mass and carrier concentration in an oxide semiconductor controlled by a double-doping mechanism. In this model oxide system, Sr1-xLaxTiO 3-δ, we can tune the effective mass ranging from 6 to 20m e as a function of filling (carrier concentration) and the scattering mechanism, which are dependent on the chosen lanthanum- and oxygen-vacancy concentrations. The effective mass values were calculated from the Boltzmann transport equation using the measured transport properties of thin films of Sr1-xLaxTiO3-δ. We show that the effective mass decreases with carrier concentration in this large-band-gap, low-mobility oxide, and this behavior is contrary to the traditional high-mobility, small-effective-mass semiconductors. © 2011 The American Physical Society.},
  year = {2011},
  journal = {Physical Review B - Condensed Matter and Materials Physics},
  volume = {83},
  number = {3},
  issn = {10980121},
  doi = {10.1103/PhysRevB.83.035101},
  note = {cited By 22},
  language = {eng},
}