@article{33501,
  keywords = {Temperature, Microscopy, Electron, Chemistry, Electrons, Density functional theory, Multiferroics, Polarization, Domain walls, Article, Bismuth, Electronic properties, Scanning tunneling microscopy (STM), Electronic configuration, Cross-sectional scanning tunneling microscopies, Electronic structure, Ferric ion, Ferric Compounds, Conducting channels, Domain boundary, Band gaps, Scanning, Atomic scale, BiFeO <sub>3</sub>, Built-in potential, Local electronic structures, Polarization discontinuity, Scanning tunneling microscopy (STM), Walls (structural partitions), Scanning Tunneling},
  author = {Y.-P Chiu and Y.-T Chen and B.-C Huang and M.-C Shih and J.-C Yang and Q He and C.-W Liang and J Seidel and Y.-C Chen and Ramamoorthy Ramesh and Y.-H Chu},
  title = {Atomic-scale evolution of local electronic structure across multiferroic domain walls},
  abstract = {Direct evidence of the electronic configurations across domain walls in BiFeO3 is quantitatively characterized by cross-sectional scanning tunneling microscopy. Atomic-scale band evolution and the asymmetrically built-in potential barrier at domain boundaries are demonstrated. The 109° domain walls register a remarkable decrease in the bandgap, suggesting a new route to control the local conducting channels within 2 nm. Copyright © 2011 WILEY-VCH Verlag GmbH &amp; Co. KGaA, Weinheim.},
  year = {2011},
  journal = {Advanced Materials},
  volume = {23},
  number = {13},
  pages = {1530-1534},
  issn = {09359648},
  doi = {10.1002/adma.201004143},
  note = {cited By 66},
  language = {eng},
}