@article{33485,
  keywords = {lead, film, crystal, silicon, imaging, crystal structure, Titanium dioxide, Article, priority journal, piezoelectricity, microelectromechanical system, imaging method, ultrasonics, echography, energy expenditure, mechanotransduction, microfluidics},
  author = {S.H Baek and J Park and D.M Kim and V.A Aksyuk and R.R Das and S.D Bu and D.A Felker and J Lettieri and V Vaithyanathan and S.S.N Bharadwaja and N Bassiri-Gharb and Y.B Chen and H.P Sun and C.M Folkman and H.W Jang and D.J Kreft and S.K Streiffer and Ramamoorthy Ramesh and X.Q Pan and S Trolier-McKinstry and D.G Schlom and M.S Rzchowski and R.H Blick and C.B Eom},
  title = {Giant piezoelectricity on Si for hyperactive MEMS},
  abstract = {{Microelectromechanical systems (MEMS) incorporating active piezoelectric layers offer integrated actuation, sensing, and transduction. The broad implementation of such active MEMS has long been constrained by the inability to integrate materials with giant piezoelectric response, such as Pb(Mg 1/3Nb2/3)O3-PbTiO3 (PMN-PT). We synthesized high-quality PMN-PT epitaxial thin films on vicinal (001) Si wafers with the use of an epitaxial (001) SrTiO3 template layer with superior piezoelectric coefficients (e31},
  year = {2011},
  journal = {Science},
  volume = {334},
  number = {6058},
  pages = {958-961},
  publisher = {American Association for the Advancement of Science},
  issn = {00368075},
  doi = {10.1126/science.1207186},
  note = {cited By 262},
  language = {eng},
}