@article{33453,
  keywords = {Pulsed laser deposition, Copper, Films, Zinc oxide, Zno, Transparency, Heterojunctions, Semiconductor doping, Acceptor doping, Cu content, Hall effect measurement, Heterojunction diodes, High transparency, Hole conduction, Hole conductivity, P-type, S-phase, Transparent conducting materials, Transparent conductors, Semiconductor diodes, Zinc sulfide},
  author = {A.M Diamond and L Corbellini and K.R Balasubramaniam and S Chen and S Wang and T.S Matthews and L.-W Wang and Ramamoorthy Ramesh and Joel W Ager},
  title = {Copper-alloyed ZnS as a p-type transparent conducting material},
  abstract = {Copper alloyed ZnS was investigated as a p-type, transparent conducting material composed of earth-abundant elements. Thin films of Cu-alloyed ZnS were synthesized using pulsed laser deposition with Cu contents in the range of x = 0.06-0.27 (Cu content x is reported as the fraction of cation present). Thermopower and Hall effect measurements show that the films are p-type. We find that transparency and conductivity are comparable to some of the best reported p-type materials with our best films exhibiting conductivities of 54 S cm -1 and optical transmission of 65% at 550. The hole conduction mechanism is discussed in terms of possible Cu acceptor doping of the ZnS and hole conductivity in a minority Cu2S phase. Transparent rectifying p-CuZnS/n-ZnO diodes were fabricated. Photo demonstrating the high transparency of a rectifying heterojunction diode made with p-type Cu-alloyed ZnS and n-type ZnO. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.},
  year = {2012},
  journal = {Physica Status Solidi (A) Applications and Materials Science},
  volume = {209},
  number = {11},
  pages = {2101-2107},
  issn = {18626300},
  doi = {10.1002/pssa.201228181},
  note = {cited By 58},
  language = {eng},
}