@article{33435,
  keywords = {energy consumption, velocity, electric potential, semiconductor, storage, electrode, oxygen, direct current, Polarization, Article, memory, photovoltaic system, research work, data storage device, illumination, memory cell, oxygen tension, solid state, ultraviolet radiation},
  author = {R Guo and L You and Y Zhou and Z.S Lim and X Zou and L Chen and Ramamoorthy Ramesh and J Wang},
  title = {Non-volatile memory based on the ferroelectric},
  abstract = {The quest for a solid state universal memory with high-storage density, high read/write speed, random access and non-volatility has triggered intense research into new materials and novel device architectures. Though the non-volatile memory market is dominated by flash memory now, it has very low operation speed with ∼10 μs programming and ∼10 ms erasing time. Furthermore, it can only withstand ∼105 rewriting cycles, which prevents it from becoming the universal memory. Here we demonstrate that the significant photovoltaic effect of a ferroelectric material, such as BiFeO 3 with a band gap in the visible range, can be used to sense the polarization direction non-destructively in a ferroelectric memory. A prototype 16-cell memory based on the cross-bar architecture has been prepared and tested, demonstrating the feasibility of this technique. © 2013 Macmillan Publishers Limited. All rights reserved.},
  year = {2013},
  journal = {Nature Communications},
  volume = {4},
  issn = {20411723},
  doi = {10.1038/ncomms2990},
  note = {cited By 218},
  language = {eng},
}