@article{33435,
  keywords = {Energy consumption, Velocity, Electric potential, Semiconductor, Storage, Electrode, Oxygen, Direct current (DC), Polarization, Article, Memory, Photovoltaic system, Research work, Data storage device, Illumination, Memory cell, Oxygen tension, Solid state, Ultraviolet radiation},
  author = {R Guo and L You and Y Zhou and Z.S Lim and X Zou and L Chen and Ramamoorthy Ramesh and J Wang},
  title = {Non-volatile memory based on the ferroelectric},
  abstract = {The quest for a solid state universal memory with high-storage density, high read/write speed, random access and non-volatility has triggered intense research into new materials and novel device architectures. Though the non-volatile memory market is dominated by flash memory now, it has very low operation speed with ∼10 μs programming and ∼10 ms erasing time. Furthermore, it can only withstand ∼105 rewriting cycles, which prevents it from becoming the universal memory. Here we demonstrate that the significant photovoltaic effect of a ferroelectric material, such as BiFeO 3 with a band gap in the visible range, can be used to sense the polarization direction non-destructively in a ferroelectric memory. A prototype 16-cell memory based on the cross-bar architecture has been prepared and tested, demonstrating the feasibility of this technique. © 2013 Macmillan Publishers Limited. All rights reserved.},
  year = {2013},
  journal = {Nature Communications},
  volume = {4},
  issn = {20411723},
  doi = {10.1038/ncomms2990},
  note = {cited By 218},
  language = {eng},
}