@article{33402,
  keywords = {lead, thin films, zirconium, ferroelectricity, Switching, Ferroelectric films, Ferroelectric switching, Nano domain, ferroelastic switching, Ferroelastic domains, Force microscopy, Nanoscale control, Voltage-controlled, Wall movements},
  author = {A.I Khan and X Marti and C Serrao and Ramamoorthy Ramesh and S Salahuddin},
  title = {Voltage-Controlled Ferroelastic Switching in Pb(Zr0.2Ti0.8)O3 Thin Films},
  abstract = {We report a voltage controlled reversible creation and annihilation of a-axis oriented ∼10 nm wide ferroelastic nanodomains without a concurrent ferroelectric 180° switching of the surrounding c-domain matrix in archetypal ferroelectric Pb(Zr0.2Ti0.8)O3 thin films by using the piezo-response force microscopy technique. In previous studies, the coupled nature of ferroelectric switching and ferroelastic rotation has made it difficult to differentiate the underlying physics of ferroelastic domain wall movement. Our observation of distinct thresholds for ferroelectric and ferroelastic switching allows us investigate the ferroelastic switching cleanly and demonstrate a new degree of nanoscale control over the ferroelastic domains. (Figure Presented). © 2015 American Chemical Society.},
  year = {2015},
  journal = {Nano Letters},
  volume = {15},
  number = {4},
  pages = {2229-2234},
  publisher = {American Chemical Society},
  issn = {15306984},
  doi = {10.1021/nl503806p},
  note = {cited By 23},
  language = {eng},
}