@inproceedings{33400,
  keywords = {Energy efficiency, Iron, Transient analysis, Ferroelectricity, Negative capacitance, Ferroelectric devices, Ferroelectric capacitors, Single-crystalline, Capacitance, Ferroelectric switching, Capacitors, Resistors, Semiconductor devices, Switches, External resistors, Semiconductor device measurements, Subthreshold characteristics, Transistor structure},
  author = {A.I Khan and K Chatterjee and Ramamoorthy Ramesh and S Salahuddin},
  title = {Understanding negative capacitance dynamics in ferroelectric capacitors},
  abstract = {We investigate negative capacitance transients-the time period during ferroelectric switching when the voltage across a ferroelectric changes in a direction opposite to that of the charge-by constructing a simple series network of an isolated single crystalline ferroelectric capacitor and an external resistor. A study of negative capacitance dynamics in such a circuit reveals that the time scale of this phenomenon is controlled by the external resistor rather than by the material dependent intrinsic speeds. As a canonical approach for directly measuring ferroelectric negative capacitance, these experiments could guide the efforts to stabilize negative capacitance in a transistor structure for sub-60 mV/decade subthreshold characteristics as well as help assess negative capacitance response speed at technologically relevant dimensions. © 2015 IEEE.},
  year = {2015},
  journal = {2015 4th Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2015 - Proceedings},
  publisher = {Institute of Electrical and Electronics Engineers Inc.},
  isbn = {9781467385688},
  doi = {10.1109/E3S.2015.7336793},
  note = {cited By 2},
  language = {eng},
}