@article{33391,
  author = {Y Gao and J.-M Hu and C.T Nelson and T.N Yang and Y Shen and L.Q Chen and Ramamoorthy Ramesh and C.W Nan},
  title = {Dynamic in situ observation of voltage-driven repeatable magnetization reversal at room temperature},
  abstract = {Purely voltage-driven, repeatable magnetization reversal provides a tantalizing potential for the development of spintronic devices with a minimum amount of power consumption. Substantial progress has been made in this subject especially on magnetic/ferroelectric heterostructures. Here, we report the in situ observation of such phenomenon in a NiFe thin film grown directly on a rhombohedral Pb(Mg1/3Nb2/3)0.7Ti0.3O3 (PMN-PT) ferroelectric crystal. Under a cyclic voltage applied perpendicular to the PMN-PT without a magnetic field, the local magnetization of NiFe can be repetitively reversed through an out-of-plane excursion and then back into the plane. Using phase field simulations we interpret magnetization reversal as a synergistic effect of the metastable ferroelastic switching in the PMN-PT and an electrically rotatable local exchange bias field arising from the heterogeneously distributed NiO clusters at the interface.},
  year = {2016},
  journal = {Scientific Reports},
  volume = {6},
  publisher = {Nature Publishing Group},
  issn = {20452322},
  doi = {10.1038/srep23696},
  note = {cited By 16},
  language = {eng},
}