@article{33364,
  keywords = {Manganese compounds, Lanthanum compounds, BiFeO3, Energy gap, Interface states, Strontium compounds, Hetero-interfaces, Scanning tunneling microscopy (STM), Electronic states, Cross-sectional scanning tunneling microscopies, Electronic interface, Interface property, La0.7Sr0.3MnO3, Magnetic interface properties, Physical effects},
  author = {B.-C Huang and P Yu and Y.H Chu and C.-S Chang and Ramamoorthy Ramesh and R.E Dunin-Borkowski and P Ebert and Y.-P Chiu},
  title = {Atomically Resolved Electronic States and Correlated Magnetic Order at Termination Engineered Complex Oxide Heterointerfaces},
  abstract = {We map electronic states, band gaps, and interface-bound charges at termination-engineered BiFeO3/La0.7Sr0.3MnO3 interfaces using atomically resolved cross-sectional scanning tunneling microscopy. We identify a delicate interplay of different correlated physical effects and relate these to the ferroelectric and magnetic interface properties tuned by engineering the atomic layer stacking sequence at the interfaces. This study highlights the importance of a direct atomically resolved access to electronic interface states for understanding the intriguing interface properties in complex oxides. © 2018 American Chemical Society.},
  year = {2018},
  journal = {ACS Nano},
  volume = {12},
  number = {2},
  pages = {1089-1095},
  publisher = {American Chemical Society},
  issn = {19360851},
  doi = {10.1021/acsnano.7b06004},
  note = {cited By 5},
  language = {eng},
}