@article{33356,
  keywords = {Film, Substrate, Electric field, Frequency analysis, Instrumentation, Thin section},
  author = {Z.Q Liu and J.H Liu and M.D Biegalski and J.-M Hu and S.L Shang and Y Ji and J.M Wang and S.L Hsu and A.T Wong and M.J Cordill and B Gludovatz and C Marker and H Yan and Z.X Feng and L You and M.W Lin and T.Z Ward and Z.K Liu and C.B Jiang and L.Q Chen and R.O Ritchie and H.M Christen and Ramamoorthy Ramesh},
  title = {Electrically reversible cracks in an intermetallic film controlled by an electric field},
  abstract = {Cracks in solid-state materials are typically irreversible. Here we report electrically reversible opening and closing of nanoscale cracks in an intermetallic thin film grown on a ferroelectric substrate driven by a small electric field ( 0.83 kV/cm). Accordingly, a nonvolatile colossal electroresistance on-off ratio of more than 108 is measured across the cracks in the intermetallic film at room temperature. Cracks are easily formed with low-frequency voltage cycling and remain stable when the device is operated at high frequency, which offers intriguing potential for next-generation high-frequency memory applications. Moreover, endurance testing demonstrates that the opening and closing of such cracks can reach over 107 cycles under 10-μs pulses, without catastrophic failure of the film. © 2017 The Author(s).},
  year = {2018},
  journal = {Nature Communications},
  volume = {9},
  number = {1},
  publisher = {Nature Publishing Group},
  issn = {20411723},
  doi = {10.1038/s41467-017-02454-8},
  note = {cited By 18},
  language = {eng},
}