@article{33350,
  keywords = {manganese compounds, Electric fields, iron compounds, lanthanum compounds, Multiferroics, BiFeO3, exchange bias, bismuth compounds, Energy utilization, Logic devices, Strontium compounds, Atoms, Behavioral research, Magnetization, magnetoelectric, Oxide interfaces, polar discontinuity},
  author = {D Yi and P Yu and Y.-C Chen and H.-H Lee and Q He and Y.-H Chu and Ramamoorthy Ramesh},
  title = {Tailoring Magnetoelectric Coupling in BiFeO 3 /La 0.7 Sr 0.3 MnO 3 Heterostructure through the Interface Engineering},
  abstract = {Electric field control of magnetism ultimately opens up the possibility of reducing energy consumption of memory and logic devices. Electric control of magnetization and exchange bias are demonstrated in all-oxide heterostructures of BiFeO 3 (BFO) and La 0.7 Sr 0.3 MnO 3 (LSMO). However, the role of the polar heterointerface on magnetoelectric (ME) coupling is not fully explored. Here, the ME coupling in BFO/LSMO heterostructures with two types of interfaces, achieved by exploiting the interface engineering at the atomic scale, is investigated. It is shown that both magnetization and exchange bias are reversibly controlled by switching the ferroelectric polarization of BFO. Intriguingly, distinctly different modulation behaviors that depend on the interfacial atomic sequence are observed. These results provide new insights into the underlying physics of ME coupling in the model system. This study highlights that designing interface at the atomic scale is of general importance for functional spintronic devices. © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim},
  year = {2019},
  journal = {Advanced Materials},
  volume = {31},
  number = {11},
  publisher = {Wiley-VCH Verlag},
  issn = {09359648},
  doi = {10.1002/adma.201806335},
  note = {cited By 8},
  language = {eng},
}