@article{33331,
  author = {H Taz and B Prasad and Y.-L Huang and Z Chen and S.-L Hsu and R Xu and V Thakare and T.S Sakthivel and C Liu and M Hettick and R Mukherjee and S Seal and L.W Martin and A Javey and G Duscher and Ramamoorthy Ramesh and R Kalyanaraman},
  title = {Integration of amorphous ferromagnetic oxides with multiferroic materials for room temperature magnetoelectric spintronics},
  abstract = {A room temperature amorphous ferromagnetic oxide semiconductor can substantially reduce the cost and complexity associated with utilizing crystalline materials for spintronic devices. We report a new material (Fe0.66Dy0.24Tb0.1)3O7-x (FDTO), which shows semiconducting behavior with reasonable electrical conductivity ( 500 mOhm-cm), an optical band-gap (2.4 eV), and a large enough magnetic moment ( 200 emu/cc), all of which can be tuned by varying the oxygen content during deposition. Magnetoelectric devices were made by integrating ultrathin FDTO with multiferroic BiFeO3. A strong enhancement in the magnetic coercive field of FDTO grown on BiFeO3 validated a large exchange coupling between them. Additionally, FDTO served as an excellent top electrode for ferroelectric switching in BiFeO3 with no sign of degradation after  1010 switching cycles. RT magneto-electric coupling was demonstrated by modulating the resistance states of spin-valve structures using electric fields. © 2020, The Author(s).},
  year = {2020},
  journal = {Scientific Reports},
  volume = {10},
  number = {1},
  publisher = {Nature Research},
  issn = {20452322},
  doi = {10.1038/s41598-020-58592-5},
  note = {cited By 0},
  language = {eng},
}