@article{25252,
  keywords = {Deposition, Thin films, Pulsed laser deposition, Characterization, Film, Films, Thin, Thin film, Thin-film, Thin films, Laser, Applications, Superconducting, Y-ba-cu-o, Ybacuo, Layers, Oriented, Oxide, P, Time, No, Process, Alloy, Alloys, Pulsed laser, Pulsed laser, Metallic, Substrate, Substrates, Layer, Circulation, Deposited, Intermediate, K, Laser deposition, Polycrystalline, Pulsed laser deposition, Ysz, Yttria stabilized zirconia, Yttria stabilized zirconia, Zirconia, Zirconium, Buffer layers, Deposition process, Growth, Metallic alloys, Si, Tape, Yba2cu3o7-delta, Ybacuo thin films},
  author = {Ronald P Reade and Xianglei Mao and Richard E Russo},
  title = {Characterization of Y-Ba-Cu-O Thin-Films and Yttria-Stabilized Zirconia Intermediate Layers on Metal-Alloys Grown by Pulsed Laser Deposition},
  abstract = {<p>The use of an intermediate layer is necessary for the growth of YBaCuO thin films on polycrystalline metallic alloys for tape conductor applications. A pulsed laser deposition process to grow controlled‐orientation yttria‐stabilized zirconia (YSZ) films as intermediate layers on Haynes Alloy No. 230 was developed and characterized. YBaCuO films deposited on these YSZ‐coated substrates are primarily <em>c</em>‐axis oriented and superconducting as deposited. The best YBaCuO films grow on (001) oriented YSZ intermediate layers and have <em>T</em><sub><em>c</em> </sub> (<em>R</em>=0) = 86.0 K and <em>J</em><sub><em>c</em> </sub> ∼ 3×10<sup>3</sup> A/cm<sup>2</sup> at 77 K.</p>},
  year = {1991},
  journal = {Applied Physics Letters},
  volume = {59},
  pages = {739-741},
  month = {08/1991},
  doi = {10.1063/1.105329},
  language = {eng},
}