@article{25199,
  keywords = {model, comparison, temperature, transportation, usa, surface, emission, pulse, simulation, laser, intensities, intensity, time, ca, e, fluence, fluences, pulses, science, c, mechanism, excitation, rates, picosecond, picosecond laser, pulsed laser, pulsed-laser, electron, nm, melting, silicon, semiconductor, equation, threshold, semiconductors, electron temperature, electron emission, electron-emission, damage, electron-temperature, infrared, infrared picosecond laser-induced electron emission, lattice, pulse width, set, yield, yields},
  author = {Samuel S Mao and Xianglei Mao and Ralph Greif and Richard E Russo},
  title = {Simulation of infrared picosecond laser-induced electron emission from semiconductors},
  abstract = {<p>In this study, we present a self-consistent model for picosecond laser induced electron emission from silicon. Surface electron emission due to a pulsed laser excitation originates from thermionic and photoelectric effects, both of which depend on the surface electron temperature and incident laser pulse intensity. By numerically solving a set of coupled transport equations, time dependent surface electron temperature as well as lattice temperature was determined. The electron emission rates and electron yields due to photoelectric and thermionic effects have been studied for varying pulse width and pulse intensity. For picosecond pulses at 1064 nm, the dominant emission mechanism was found to be photoelectric emission for pulse fluences below the melting threshold. In addition, a comparison between electron emission due to the picosecond infrared pulse and a picosecond 532 nm pulse was also presented. (C) 1998 Elsevier Science B.V</p>},
  year = {1998},
  journal = {Applied Surface Science},
  volume = {129},
  pages = {206-211},
  note = {<p>LBNL-41230 NOT IN FILE</p>},
  language = {eng},
}