@article{25191,
  keywords = {Photodiodes, UV light, ZnO nanowires},
  author = {Lei Luo and Yanfeng Zhang and Samuel S Mao and Liwei Lin},
  title = {Fabrication and characterization of ZnO nanowires based UV photodiodes},
  abstract = {<p>A heterojunction of n-type zinc oxide (ZnO) nanowires and p-type silicon has been successfully constructed to demonstrate ultraviolet (UV) photodiodes. The prototype device consists of naturally doped n-type ZnO nanowires grown on top of a (1 0 0) p-silicon substrate by the bottom-up growth process. The diameter of the nanowires is in the range of 70–120 nm, and the length is controlled by the growth time. The isolation is achieved by using spin-on glass (SOG) that also works as the foundation of the top electrode. The current–voltage (I–V) characteristics show the typical rectifying behavior of heterojunctions, and the photodiode exhibits response of ∼0.07 A/W for UV light (365 nm) under a 20 V reverse bias.</p>},
  year = {2006},
  journal = {Sensors and Actuators A: Physica},
  volume = {127},
  pages = {201-206},
  month = {03/2006},
  doi = {10.1016/j.sna.2005.06.023},
  language = {eng},
}