@article{25187,
  keywords = {Ablation, Laser ablation, Plasma, Silicon, Bremsstrahlung, Critical temperature, Electron density, Electron temperature, Elemental semiconductors, Laser radiation},
  author = {Haichen Liu and Xianglei Mao and Jong-Hyun Yoo and Richard E Russo},
  title = {Nonlinear changes in plasma and crater properties during laser ablation of Si},
  abstract = {<p>A dramatic change in plasma characteristics, as well as a significant increase in the quantity of ablated mass were observed at a laser power density threshold of 20 GW/cm<sup>2</sup>. The electron number density and temperature of the laser-induced plasma show dramatic changes in their nonlinear behavior in the range of 2-80 GW/cm<sup>2</sup>. The crater volume undergoes some type of phase explosion at the threshold. Mechanisms such as inverse bremsstrahlung and self-regulation were used to describe the behavior below threshold. Self-focusing and critical temperature are discussed to explain the dramatic changes at the threshold.</p>},
  year = {1999},
  journal = {Applied Physics Letters},
  volume = {75},
  pages = {1216-1218},
  issn = {0003-6951 (print), 1077-3118 (online)},
  doi = {10.1063/1.124646},
  language = {eng},
}