@article{25068,
  author = {Wanqing Cao and Arlon J Hunt},
  title = {Thermal annealing of photoluminescent Si deposited on silica aerogels},
  abstract = {<p>Photoluminescence (PL) of chemically vapor deposited Si on silica aerogels has been investigated as a function of annealing temperature up to 650°C in air. The PL peak red shifts considerably with temperatures up to 350°C and then slightly blue shifts above 350°C. There are at least two different oxidation stages in the thermal annealing of porous Si: surface oxidation below 350°C, which results in higher luminescence yield particularly for large Si particles, and internal oxidation above 350°C, which reduces the effective particle size.</p>},
  year = {1994},
  journal = {Solid State Communications},
  volume = {91},
  pages = {645-648},
  note = {<p>0038-1098doi: DOI: 10.1016/0038-1098(94)90564-9</p>},
  language = {eng},
}