Photoluminescence (PL) of chemically vapor deposited Si on silica aerogels has been investigated as a function of annealing temperature up to 650{\textdegree}C in air. The PL peak red shifts considerably with temperatures up to 350{\textdegree}C and then slightly blue shifts above 350{\textdegree}C. There are at least two different oxidation stages in the thermal annealing of porous Si: surface oxidation below 350{\textdegree}C, which results in higher luminescence yield particularly for large Si particles, and internal oxidation above 350{\textdegree}C, which reduces the effective particle size.
}, year = {1994}, booktitle = {Solid State Communications}, journal = {Solid State Communications}, series = {Solid State Communications}, volume = {91}, pages = {645-648}, note = {0038-1098doi: DOI: 10.1016/0038-1098(94)90564-9
}, language = {eng}, }