@article{24393,
  keywords = {Optical properties, Dual magnetron sputtering, Electrical, Structural, Tungsten oxynitride thin films},
  author = {Sodky H Mohamed and André Anders},
  title = {Structural, optical and electrical properties of WOxNy films deposited by reactive dual magnetron sputtering},
  abstract = {<p>Thin films of tungsten oxynitrides were prepared by dual magnetron sputtering of tungsten using argon/oxygen/nitrogen gas mixtures with various nitrogen/oxygen ratios. The presence of even relatively small amounts of oxygen led to close-to-stoichiometric WO<sub>3</sub>, with little incorporation of nitrogen, therefore the films were labeled as WO<sub><em>x</em></sub>(N<sub><em>y</em></sub>). Oxygen had a great effect not only on the composition but on the structure of WO<sub><em>x</em></sub>(N<sub><em>y</em></sub>) films, as shown by Rutherford backscattering and X-ray diffraction, respectively. Significant incorporation of nitrogen occurred only when the nitrogen partial pressure exceeded 89% of the total reactive gas pressure. Sharp changes in the stoichiometry, deposition rate, room temperature resistivity, electrical activation energy and optical band gap were observed when the nitrogen/oxygen ratio was high. The deposition rate increased from 0.31 to 0.89 nm/s, the room temperature resistivity decreased from 1.65 × 10<sup>8</sup> to 1.82 × 10<sup>− 2</sup> Ω cm, the electrical activation energy decreased from 0.97 to 0.067 eV, and the optical band gap decreased from 3.19 to 2.94 eV upon nitrogen incorporation into the films. WO<sub><em>x</em></sub>(N<sub><em>y</em></sub>) films were highly transparent as long as the nitrogen incorporation was low, and were brownish (absorbing) and partially reflecting as nitrogen incorporation became significant.</p>},
  year = {2006},
  journal = {Surface and Coatings Technology},
  volume = {201},
  pages = {2977-2983},
  doi = {10.1016/j.surfcoat.2006.06.008 },
  language = {eng},
}