@article{23712,
  author = {Jennifer T Ross and Michael D Rubin},
  title = {High Quality GaN Grown by Reactive Sputtering},
  abstract = {<p>Gallium nitride films were grown by reactive rf magnetron sputtering on sapphire substrates. Crystalline (1120) GaN films were obtained on (0112) sapphire at substratestemperatures between 640-680 &deg;C. High N<sub>2</sub> partial pressures are required to crystalize the GaN films. Nitrogen incorporation and crystal quality of GaN films are examined as a function of substrate temperature and nitrogen partial pressure. Band gaps of 3.4 eV, and photoluminescence peaks as narrow as 11 meV are reported for sputtered GaN films.</p>},
  year = {1991},
  journal = {Mater. Lett},
  volume = {12},
  pages = {215},
  language = {eng},
}