@inproceedings{23564,
  author = {Jennifer T Ross and Michael D Rubin and Ture K Gustafson},
  title = {Crystalline Growth of Wurtzite GAN on (111) GaAs},
  abstract = {<p>Gallium Nitride films were grown on (111) Gallium Arsenide substrates using reactive rf magnetron sputtering. Despite a 20% lattice mismatch and different crystal structure, wurtzite GaN films grew epitaxially in basal orientation on (111) GaAs substrates. Heteroepitaxy was observed for growth temperatures between 550-600°C. X-ray diffraction patterns revealed (0002) GaN peak with a full-width-half-maximum (FWHM) as narrow as 0.17°. Possible surface reconstructions to explain the epitaxial growth are presented.</p>},
  year = {1992},
  journal = {Materials Research Society Symposium},
  volume = {242},
  pages = {457},
  doi = {10.1557/PROC-242-457},
  language = {eng},
}