@inproceedings{23265,
  author = {Nathan Newman and T.C Fu and Z Liu and Zuzanna Liliental-Weber and Michael D Rubin and James S Chan and Erin C Jones and Jennifer T Ross and Ian M Tidswell and Kin Man Yu and Nathan W Cheung and Eicke R Weber},
  title = {Fundamental Materials-Issues Involved in the Growth of GaN by Molecular Beam Epitaxy},
  abstract = {<p>Gallium nitride is one of the most promising materials for ultraviolet and blue light-emitting diodes and lasers. Both Molecular Beam Epitaxy (MBE) and Metal-Organic Chemical Vapor Deposition (MOCVD) have recently made strong progress in fabricating high-quality epitaxial GaN thin films. In this paper, we review materials-related issues involved in MBE growth. We show that a strong understanding of the unique meta-stable growth process allows us to correctly predict the optimum conditions for epitaxial GaN growth. The resulting structural, electronic and optical properties of the GaN films are described in detail.</p>},
  year = {1994},
  language = {eng},
}